<-- Return to the previous page

Wen Wang

Faculty Photo
Wen Wang
Professor (joint with Electrical Engineering)
1320 S.W. Mudd, Mail Code: 4712
New York, NY 10027

Phone: +1 212 854 1748
Email:
Home Page


Thayer Lindsley Professor in the Faculty of Engineering and Applied Science and Professor of Applied Physics and Applied Mathematics

Research specialty

Ultrahigh speed electronics, heterogeneous materials integration, and semiconductor optoelectronics, including lasers and photodetectors


Education

Ph.D. Cornell, 1981


Biography

He joined the Columbia University in 1987 where he holds a joint appointment in Electrical Engineering and Applied Physics and Applied Mathematics. Between 1981 and 1982 he worked at the Rockwell Science Center and between 1982 and 1987 he worked at the IBM T. J. Watson Research Center.  During Fall 1986, he was a Visiting Associate Professor with the EECS dept at MIT.  He has contributed some 250 journal articles in the areas of heterostructure device physics, high speed transistors, semiconductor lasers, photodetectors, molecular beam epitaxy, and surface science. He is a fellow of the IEEE, American Physical Society, and a distinguished lecturer of the IEEE Electron Device Society. He received his Ph.D. and master's degrees in electrical engineering at Cornell University, and the bachelor's degree in physics from the National Taiwan University.


Select Publications

Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L., "High electron mobility AlGaN/GaN heterostructures grown on sapphire substrates by molecular-beam epitaxy", Appl. Phys. Lett. 76, 742 (2000).

J. B. Heroux, X. Yang, and W. I. Wang , "GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 m", Appl. Phys. Lett. 75, 2716 (1999).

X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, " Molecular beam epitaxial growth of InGaAsNSb/GaAs quantum wells for long-wavelength semiconductor lasers", Appl. Phys. Lett. Vol.75, No.2, 178 (1999).

Y. Zhao, M.J. Jurkovic, and W.I. Wang, "Characterization of AuGe and AuTe based ohmic contacts on InAs n-channel high electron mobility transistors", J. Electrochem. Soc. 14, 1067 (1997).

X. Li, J.L. Jimenez, M.J. Jurkovic, and W.I. Wang, "Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser, in Optoelectronic Integrated Circuits, Proc. SPIE 3006, pp. 126-133 (1997).