James S. Im

James S. Im
Professor(office) 1106 S.W. Mudd
(mail) 200 S.W. Mudd, Mail Code: 4701
New York, NY 10027
Phone: +1 212 854 8341
Email:
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Research Specialty
Nucleation in condensed systems; laser-induced crystallization of semiconductor films; thin film transistors.Excimer Laser-Induced Crystallization (ELC) of Amorphous Si Films: (1) experimental, numerical, and theoretical investigations on various far-from equilibrium/melt-mediated phase transformations encountered in ELC; and (2) development of the sequential lateral solidification (SLS) method for producing single-crystal Si on glass and plastic substrates for fabrication of low-temperature single-crystal thin-film-transistor (LT s-Si TFT) devices.
Nucleation in Condensed Systems: (1) development of a new experimental technique for measuring the isothermal solid nucleation rates in mildly supercooled liquid Si over a wide frequency range; and (2) theoretical and numerical analyses of thermal and athermal nucleation in condensed system.
Education
Massachusetts Institute of Technology, Ph.D. (Electronic materials), 1989Cornell University, B.S. with Distinction (Materials Science), 1984
Honors
- Bohmisch Physical Society
- Sigma Xi
- Alpha Sigma Mu
Professional Experience
Columbia University, New York- Professor of Materials Science and Engineering (2002 - Present)
- Chair of Materials Science and Engineering Program (2002 - Present)
- Associate Professor of Materials Science and Engineering (1995 - 2002)
- Assistant Professor of Materials Science and Engineering (1991-1994)
California Institute of Technology
- Research Fellow in Applied Physics (1989-1991)
MIT Lincoln Laboratory
- Research Consultant - Electronic Materials Group (1988-1989)
Professional Affiliations
- Materials Research Society
- American Physical Society
Publications (Highlights)
James S. Im, M. A. Crowder, Robert S. Sposili, J. P. Leonard, H. J. Kim, J. H. Yoon, Vikas V. Gupta, H. Jin Song, and Hans Cho, "Controlled super-lateral growth of Si films for microstructural manipulation and optimization," Physica Status Solidi 166, 603 (1998)James S. Im, Vikas V. Gupta, and M. A. Crowder, "On determining the relevance of athermal nucleation in rapidly quenched liquids," Appl. Phys. Lett. 72, 662 (1998)
Vikas V. Gupta, H. Jin Song and James S. Im, "Numerical Analysis of excimer-laser induced melting and solidification of this Si films," Appl. Phys. Lett. 71, 99 (1997)
James S. Im, Robert S. Sposili, and M. A. Crowder, "Single-crystal Si films for thin-film transistor devices," Appl. Phys. Lett. 70, 3434 (1997)
Robert S. Sposili and James S. Im, "Sequential lateral solidification of thin silicon films on SiO2," Appl. Phys. Lett. 69, 2864 (1996)
H. Jin Song and James S. Im, "Single-crystal Si islands on SiO2 obtained via excimer laser irradiation of a patterned Si film," Appl. Phys. Lett. 68, 3165 (1996)
H. J. Kim and James S. Im, "New excimer-laser-crystallization method for producing large-grained and grain boundary-location-controlled Si films for thin-film transistors," Appl. Phys. Lett. 68, 1513 (1996)
James S. Im and Robert S. Sposili, "Crystalline Si films for Integrated Active-Matrix Liquid-Crystal Displays," Mater. Res. Bull. 21, (3)39 (1996)